Resist reflow method for making submicron patterned resist...

Details Resist reflow method for making submicron patterned resist... Resist reflow method for making submicron patterned resist...

B - Operations, Transporting

05

D

117/102, 117/61

B05D 3/04 (2006.01) H01L 21/00 (2006.01) H01L 23/29 (2006.01)

Patent

CA 1053090

RESIST REFLOW METHOD FOR MAKING SUBMICRON PATTERNED RESIST MASKS Abstract of the Disclosure The method for making patterned resist masks having minimum opening dimensions. The mask is prepared initially using standard photo or electron beam lithography techniques to yield the smallest aperture dimensions consistent with the state-of-the-art. Then, the resulting mask is placed within a chamber containing an atmosphere of resist solvent vapor. The vapor is absorbed by the patterned resist mask causing controlled resist reflow which uniformly reduces the dimensions of the resist openings by an amount determined by time, temp- erature, resist thickness, resist type and solvent used.

253537

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