Resistive field shields for high voltage devices

H - Electricity – 01 – L

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356/162

H01L 29/06 (2006.01) H01L 23/64 (2006.01)

Patent

CA 1292327

IMPROVED RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES Abstract A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.

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