H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/162
H01L 29/06 (2006.01) H01L 23/64 (2006.01)
Patent
CA 1292327
IMPROVED RESISTIVE FIELD SHIELDS FOR HIGH VOLTAGE DEVICES Abstract A high voltage silicon device with a resistive field shield comprising semi-insulating silicon nitride (sin-SiN). The N/Si ratio is controlled to provide the resistive field shield with the desired conductivity. This resistive field shield material may also serve as an outer protection layer for the device.
580461
Knolle William Raymond
Osenbach John William
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
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