Resistor trimming with small uniform spot from solid-state...

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B23K 26/00 (2006.01) B23K 26/073 (2006.01) H01C 17/242 (2006.01)

Patent

CA 2434969

A uniform laser spot, such as from an imaged shaped Gaussian output (118) or a clipped Gaussian spot, that is less than 20 @m in diameter can be employed for both thin and thick film resistor trimming to substantially reduce microcracking. These spots can be generated in an ablative, nonthermal, UV laser wavelength to reduce the HAZ and/or shift in TCR.

On peut utiliser une tache laser uniforme, telle que celle d'une sortie gaussienne (118) d'image modelée ou une tache gaussienne découpée, dont le diamètre est inférieur à 20 µm, afin d'effectuer l'ajustage de résistances à couches minces ou à couches épaisses, de manière à limiter considérablement le fissurage microscopique. Ces taches peuvent être générées dans une longueur d'onde laser UV ablative non thermique afin de limiter le HAZ et/ou le déplacement dans TCR.

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