Resonant tunneling semiconductor devices

Details Resonant tunneling semiconductor devices Resonant tunneling semiconductor devices

H - Electricity

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L

356/119

H01L 29/86 (2006.01) H01L 29/205 (2006.01) H01L 29/76 (2006.01) H01L 31/0352 (2006.01) H01L 33/00 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2000024

ABSTRACT A resonant tunneling semiconductor device is disclosed including first and second layers of n type semiconductor crystal, each having an n doping level between 1016 and 1017 cm-3 , separated by first and second barriers of semiconductor crystal having therebetween a quantum well of p type semiconductor crystal, having a p doping level between 1016 and 1017 cm-3. Conduction occurs by tunneling serially through the first and second barriers. The first and second layers of n type semiconductor crystal have a composition of substitute alloy element x2 . The quantum well of p type semiconductor material has a composition of substitute alloy element x1, and the first and second barriers of semiconductor crystal have a composition of substitute alloy element x3 , wherein x1<x2<x3, and wherein the quantum well of p type semiconductor crystal defines a first energy gap. The first and second layers of n type semiconductor crystal define a second energy gap, and the first and second barriers of semiconductor crystal define a third energy gap. The first energy gap is less than said second energy gap, and the second energy gap is less than said third energy gap. An electrical contact extends to the quantum well, and is formed by a p type semiconductor material.

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