Resonant tunneling transistor

Details Resonant tunneling transistor Resonant tunneling transistor

H - Electricity

01

L

345/26

H01L 29/72 (2006.01) H01L 29/73 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1276275

RESONANT TUNNELING, TRANSISTOR Abstract This invention embodies a heterostructure bipolar device comprising: an emitter region 1 having a first conductivity type and a first composition and bandgap profile, a base region 3 having a second conductivity type and a second composition and bandgap profile, a collector region 5 having said first conductivity type and having a third composition and bandgap profile, electricalcontacts, e.g. 7 and 11, at least to said emitter and collector regions, respectively, and a quantum well between said collector region and said electrical contact to said emitter region, said device being capable of operating such that there are first and third base-emitter voltages and a second base- emitter voltage intermediary to said first and third base emitter voltages such that, at said first, second, and third base-emitter voltages, the bottom of the conduction band in at least a portion of said emitter region is below, at, and above, respectively, a quantum resonance of said quantum well, said portion being between said first electrical contact and said quantum well. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In anotherembodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region. (FIG. 1)

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