G - Physics – 01 – L
Patent
G - Physics
01
L
G01L 1/10 (2006.01) G01L 1/18 (2006.01) G01L 9/00 (2006.01) H01L 49/00 (2006.01)
Patent
CA 2211678
A force transducer having a semiconductor substrate including a surface defining a recess, such that the recess has a peripheral boundary and a flexible diaphragm connected to the surface along the peripheral boundary to enclose the recess so that the diaphragm moves in response to changes in a force applied thereto. The force transducer also includes a resonant beam connected to the surface adjacent the peripheral boundary. The resonant beam has a frequency of resonation. Movement of the diaphragm in response to changes in the force applied to the diaphragm changes the frequency of resonation of the resonant beam.
Cette invention concerne un capteur de force formé d'un substrat semi-conducteur comportant un évidement couvert par une membrane souple collée à la périphérie de l'évidement, mebrane qui se déplace selon les variations de la force exercée. Le capteur de force comprend également une lame vibrante fixée au substrat à proximité de la périphérie de l'évidement. La lame vibrante a une fréquence de résonance. Le mouvement de la membrane selon les variations de la force exercée modifie la fréquence de résonance de la lame vibrante.
Mattes Michael F.
Seefeldt James D.
Macrae & Co.
Ssi Technologies Inc.
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