Reverse switching rectifier and method for making same

Details Reverse switching rectifier and method for making same Reverse switching rectifier and method for making same

H - Electricity

01

L

356/42

H01L 29/74 (2006.01) H01L 29/08 (2006.01) H01L 29/417 (2006.01) H01L 29/87 (2006.01)

Patent

CA 1065494

ABSTRACT OF THE DISCLOSURE A reverse switching rectifier is described in which a PNPN semiconductor structure has a specially adapted N-type end zone or cathode-emitter zone. The N-type end zone penetrates to two different levels in the semiconductor body. A deep central portion and a shallow peripheral portion of the N-type end zone are produced by etching a cavity in the center of the body followed by diffusion of N- type dopant material. The exposed surfaces of the N-type end zone are then metallized to provide electrical and thermal contact thereto.

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