H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/44
H01L 29/74 (2006.01) H01L 29/87 (2006.01)
Patent
CA 1070434
ABSTRACT OF THE DISCLOSURE A reverse switching reftifier is described in which a PNPN semiconductor structure has a specially adapted emitter zone. The emitter zone is segmented, one segment penetrating to a deeper level in the semiconductor body than a second segment. Uniform firing 18 initiated in the deeper segment which in turn fires the remaining segments of the emitter.
268878
Chu Chang K.
Motto John W. (jr.)
LandOfFree
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