Reversible charge storage floating gate heterojunction device

Details Reversible charge storage floating gate heterojunction device Reversible charge storage floating gate heterojunction device

G - Physics

11

C

356/23, 356/73

G11C 11/40 (2006.01) H01L 29/205 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1238719

YO984-085 REVERSIBLE CHARGE STORAGE FLOATING GATE HETEROJUNCTION DEVICE Abstract of the Disclosure A semiconductor storage device provides reversible control of conduction in a band offset heterojunction field effect transistor by providing an asymmetric barrier controlled charge storage capability that can position a potential well across the Fermi level to produce conduction and away from the Fermi level for a non-conducting condition and to retain that position in the absence of a signal. A GaAs channel FET with a multilayer gate of in order of proximity to the GaAs channel a gate layer of GaAlAs, a storage layer of GaAs, an asymmetric barrier layer of GaAlAs graded toward the GaAs storage layer and an ohmic adapting layer of GaAs.

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