Rewritable optical storage medium and use of such medium

Details Rewritable optical storage medium and use of such medium Rewritable optical storage medium and use of such medium

G - Physics

11

B

G11B 7/24 (2006.01) B41M 5/26 (2006.01)

Patent

CA 2475372

A description is given of a rewritable optical storage medium (10) comprising a substrate (1), a first dielectric layer (2), a phase-change recording layer (3) on the basis of Ge-Sb-Te, a second dielectric layer (4), and a metal reflective layer (5). The recording layer (3) is an alloy having the composition GexSbyTez, in atom %, wherein 0 < x < 15, 50 < y < 80, 10 < z < 30 and x + y + z = 100, and the recording layer (3) has a thickness selected from the range of 7 to 18 nm. Such a medium (10) is suitable for high data rate recording with a data rate of larger than 25 Mb/s while the recording layer (6) remains relatively thin having a relatively high optical transparency.

L'invention concerne un support optique réenregistrable (10) composé d'un substrat (1), d'une première couche diélectrique (2), d'une couche d'enregistrement (3) à variation de phase basée sur Ge-Sb-Te, d'une deuxième couche diélectrique (4) et d'une couche métallique réfléchissante (5). La couche d'enregistrement (3) consiste en un alliage dont la composition en pourcentage atomique est égale à Ge¿x?Sb¿y?Te¿z?, dans laquelle 0 < x < 15, 50 < y < 80, 10 < z < 30 et x + y + z = 100, cette couche d'enregistrement (3) possédant une épaisseur sélectionnée dans une plage de 7 à 18 nm. Ce support (10) permet d'enregistrer très rapidement des données selon un débit supérieur à 25 Mb/s, tandis que la couche d'enregistrement (6) conserve une minceur relative, étant donné que sa transparence optique est relativement élevée.

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