Rf bias sputtering method for producing insulating films...

Details Rf bias sputtering method for producing insulating films... Rf bias sputtering method for producing insulating films...

C - Chemistry, Metallurgy

23

C

204/96.06

C23C 15/00 (1980.01)

Patent

CA 1078331

RF BIAS SPUTTERING METHOD FOR PRODUCING INSULATING FILMS FREE OF SURFACE IRREGULARITIES ABSTRACT OF THE DISCLOSURE Using this method an insulating film substantially free from surface irregularities is RF bias sputtered onto a smooth polycrystalline or micro-roughened surface. This is accomplished by controlled resputtering at a first low ratio and then, after a substantially continuous layer of insulative amorphous film is deposited over the substrate, increasing the resputtering to a second higher ratio.

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