C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 33/00 (2006.01)
Patent
CA 2713828
The present invention relates to rod-type, polycrystalline silicon having a rod diameter of >100 mm, obtained by deposition of silicon-containing gas according to the Siemens method, wherein the Si rods are brought into contact with hydrogen at the end of the deposition process during cooling in the reactor, and the cooled Si rods obtained have in perpendicular cross section cracks and/or radial stresses having a defined size.
Mcfadden Fincham
Wacker Chemie Ag
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