B - Operations – Transporting – 23 – K
Patent
B - Operations, Transporting
23
K
B23K 20/00 (2006.01) B23K 20/14 (2006.01) B23K 20/24 (2006.01) C23C 14/34 (2006.01) H01L 21/02 (2006.01)
Patent
CA 2660706
A normal temperature joining method for joining substrates at a normal temperature through intermediate members comprises a step of forming the intermediate member on the surfaces to be joined of the substrates by physically sputtering targets and a step of activating the surfaces to be joined with an ion beams. The target to be physically sputtered is preferably made of a plurality of kinds of materials. Since the materials of the intermediate member are sputtered from the targets placed in various direction viewed from the surfaces to be joined of the substrates, the intermediate member can be uniformly formed on the surfaces to be joined. Further, since the intermediate member is made of a plurality of kinds of materials, normal temperature joining of substrates which are hard to join even if an intermediate member is made of a single kind of material is possible without heating them during joining and without excessive press-bonding.
La présente invention concerne un procédé d'assemblage à température normale, destiné à assembler des substrats à température normale grâce à des éléments intermédiaires, qui comprend une étape de formation de l'élément intermédiaire sur les surfaces du substrat à assembler par pulvérisation physique de cibles et une étape d'activation des surfaces à assembler avec des faisceaux d'ions. La cible à pulvériser physiquement se compose idéalement d'une pluralité de matériaux de toute sorte. Les matériaux de l'élément intermédiaire étant pulvérisés à partir des cibles disposées selon diverses directions observées depuis les surfaces des substrats à assembler, l'élément intermédiaire peut alors être formé de manière uniforme sur les surfaces à assembler. En outre, l'élément intermédiaire étant obtenu à partir d'une pluralité de matériaux en tout genre, il est possible d'assembler à température normale des substrats, difficiles à assembler même si un élément intermédiaire est obtenu à partir d'un seul type de matériau, sans les chauffer au cours de l'assemblage et sans effectuer de liaison par pression excessive.
Funayama Masahiro
Goto Takayuki
Ide Kensuke
Takagi Hideki
Utsumi Jun
Gowling Lafleur Henderson Llp
Mitsubishi Heavy Industries Ltd.
National Institute Of Advanced Industrial Science And Technology
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