Roughening surface of a substrate

Details Roughening surface of a substrate Roughening surface of a substrate

H - Electricity

05

K

117/90, 204/96.0

H05K 3/38 (2006.01) C23C 18/22 (2006.01) H05K 3/10 (2006.01) H05K 3/18 (2006.01)

Patent

CA 1301698

ROUGHENING SURFACE OF A SUBSTRATE ABSTRACT OF THE DISCLOSURE The surface of a substrate is roughened by providing a substrate which comprises a resinous material and an in- organic particulate material; and etching a surface of the substrate to selectively etch the resinous material and thereby produce the roughened surface. The resinouse ma- terial can be thermoplastic or thermosetting, particularly those useful in preparing dielectric substrates employed in the preparation of integrated circuit modules. Inor- ganic particulate materials such as SiO2, CaCO3, Al2 O3, CaO2, SiC and CaF2, can be used, the preferred material being silica (SiO2). The preferred etching processes are the so-called "dry etching processes" such as plasma etching, sputter etching and reactive ion etching; which eliminate the need for wet chemical processing and all the attendant problems thereof. This roughening process re- sults in greatly enhanced adhesion of the photosensitive materials to dielectric substrates.

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