C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/20 (2006.01)
Patent
CA 2673660
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
L'invention concerne un substrat de saphir comportant une surface généralement plane ayant une orientation cristallographique sélectionnée parmi le groupe constitué des orientations de plan a, de plan r, de plan m, et de plan c, et ayant une nTTV qui n'est pas supérieure à environ 0,0 37 µm/cm2, la nTTV étant une variation d'épaisseur totale normalisée pour une surface superficielle de la surface généralement plane, le substrat ayant un diamètre qui n'est pas inférieur à environ 9,0 cm.
Cherian Isaac K.
Chinnakaruppan Palaniappan
Rizzuto Robert A.
Simpson Matthew A.
Tanikella Brahmanandam V.
Gowling Lafleur Henderson Llp
Saint-Gobain Ceramics & Plastics Inc.
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