G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/017 (2006.01) G02F 1/35 (2006.01)
Patent
CA 2416127
The invention concerns a saturable absorbent structure comprising a stack of layers forming a succession of quantum wells and barriers and a plurality of recombination centres distributed in said stack. The invention is characterised in that the recombination centres are made of a material such that they define with the materials of the stack one or several energy levels in the forbidden band of energy defined between the conduction band and the valence band of the wells of the stack.
Structure d'absorbant saturable comportant d'une part un empilement de couches constituant une succession de puits quantiques et de barrières et d'autre part une pluralité de centres de recombinaison qui sont répartis dans ledit empilement, caractérisé en ce que les centres de recombinaison sont en un matériau tels qu'ils définissent avec les matériaux de l'empilement un ou plusieurs niveaux d'énergie discrets dans la bande d'énergie interdite définie entre la bande de conduction et la bande de valence des puits de l'empilement.
Dehaese Olivier
Le Corre Alain
Loualiche Slimane
Marceaux Alexandre
France Telecom
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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