Saturated and unsaturated halocarbon gases in plasma etching

Details Saturated and unsaturated halocarbon gases in plasma etching Saturated and unsaturated halocarbon gases in plasma etching

C - Chemistry, Metallurgy

30

B

148/3.2

C30B 33/08 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1113352

SATURATED AND UNSATURATED HALOCARBON GASES IN PLASMA ETCHING ABSTRACT A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodi- ment is a gaseous mixture containing C3F6 and C2F6.

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