C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.2
C30B 33/08 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01)
Patent
CA 1113352
SATURATED AND UNSATURATED HALOCARBON GASES IN PLASMA ETCHING ABSTRACT A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodi- ment is a gaseous mixture containing C3F6 and C2F6.
314409
Coburn John W.
Winters Harold F.
International Business Machines Corporation
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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