Schottky barrier amorphous silicon solar cell with thin...

Details Schottky barrier amorphous silicon solar cell with thin... Schottky barrier amorphous silicon solar cell with thin...

H - Electricity

01

L

356/153, 345/22

H01L 31/06 (2006.01) H01L 31/07 (2006.01)

Patent

CA 1113594

ABSTRACT OF THE DISCLOSURE A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier function with the intrinsic amor- phous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

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