Schottky barrier contact and methods of fabrication thereof

Details Schottky barrier contact and methods of fabrication thereof Schottky barrier contact and methods of fabrication thereof

H - Electricity

01

L

356/153, 356/73

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1079867

AN IMPROVED SCHOTTKY BARRIER CONTACT AND METHODS OF FABRICATION THEREOF ABSTRACT An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in com- bination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired inter- metallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon sub- strate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic com- pound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired inter- metallic structure, although it is not essential. The result- ing devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.

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