Schottky barrier diode and a method of manufacturing thereof

Details Schottky barrier diode and a method of manufacturing thereof Schottky barrier diode and a method of manufacturing thereof

H - Electricity

01

L

H01L 29/872 (2006.01) H01L 21/04 (2006.01) H01L 21/28 (2006.01) H01L 21/329 (2006.01) H01L 29/41 (2006.01)

Patent

CA 2064146

A Schottky barrier diode includes a semiconductor substrate (10), an ohmic metal electrode (20) formed on a first region of the semiconductor substrate (10), and a Schottky metal electrode (30) formed on a second region spaced apart from the first region on the semiconductor substrate (10). The Schottky electrode (30) includes at least one ohmic portion (31) forming an ohmic contact with the semiconductor substrate (10), whereby rectifying characteristics of the Schottky barrier diode are improved.

iode Schottky incluant un substrat semi-conducteur (10), une électrode métallique ohmique (20) formée sur une première région du substrat semi-conducteur (10) et une électrode métallique Schottky (30) formée sur une deuxième région éloignée de la première région du substrat semi-conducteur (10). L'électrode Schottky (30) comprend au moins une partie ohmique (31) formant un contact ohmique avec le substrat semi-conducteur (10), ce qui permet d'améliorer les caractéristiques de redressement de la diode Schottky.

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