Schottky barrier diode with highly doped surface region

Details Schottky barrier diode with highly doped surface region Schottky barrier diode with highly doped surface region

H - Electricity

01

L

356/153, 356/58,

H01L 29/872 (2006.01) H01L 21/8244 (2006.01)

Patent

CA 1285334

8332-158/53.1094 IMPROVED SCHOTTKY BARRIER DIODE FOR ALPHA PARTICLE RESISTANT STATIC RANDOM ACCESS MEMORIES ABSTRACT OF THE DISCLOSURE An improved Schottky barrier cliode for increasing the alpha particle resistance of static random access memories includes an extra implanted N-type region at the surface of the epitaxial layer to increase the impurity concentration there to about 1x1019 atoms per cubic centimeter. In one device, arsenic is employed to overcompensate a guard ring where the Schottky diode is to be formed, while in another device phosphorus is employed and the guard ring is not overcompensated. The resulting Schottky diodes, when employed in the static random access memory cells, dramatically increase the alpha particle resistance of such cells, while also substantially decreasing the access time. RCC03al26:ms

556200

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