Schottky barrier field effect transistors

Details Schottky barrier field effect transistors Schottky barrier field effect transistors

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 29/10 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1171553

PHB 32747 15 5.10.1981 ABSTRACT: Schottky barrier field effect transistors, A high-gain AMESFET (i.e. a Schottky barrier FET) has the gate electrode (6) present directly on a semiconductor body (1). A highly doped layer (2), which forms part of the channel of the transistor extends below electrode (6) between source and drain regions (4 and 5) respectively. A highly doped surface region (7) of the opposite conductivity type to layer (2) is present be- tween electrode (6) and layer (2). Region (7), which is so thin that it is fully depleted in the zero gate bias condition, raises the effective height of the Schottky barrier. Layer (2) is so thin that it can support with- out breakdown an electric field greater than the critical field for avalanche breakdown of the semiconductor material of this layer. Thus the doping concentration of layer (2) can be increased so that more charge can be depleted from it. The region (7) extends beyond the gate electrode (6) on the drain side to reduce the surface electric field. The inclusion of a more lightly doped layer (13) of the same conductivity type as layer (2) increases the mobility of the charge carriers in the channel.

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