H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/10 (2006.01) H01L 21/265 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01) H01L 29/47 (2006.01) H01L 29/80 (2006.01) H01L 29/812 (2006.01)
Patent
CA 1184320
TITLE OF THE INVENTION A Schottky-barrier gate field effect transistor and a process for the production of the same ABSTRACT OF THE DISCLOSURE This invention is concerned with an improved Schottky-barrier gate field effect transistor, in which an active layer of one electrically conductive type semiconductor crystal is formed on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer consists of a first active layer which thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a substantially similar carrier concentration to the first active layer and a larger thickness than the first active layer and being provided at the both sides of the first active layer, the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source elect- rode and drain electrode on the surface part.
401059
Ebata Toshiki
Hayashi Hideki
Iiyama Michitomo
Kikuchi Kenichi
Riches Mckenzie & Herbert Llp
Sumitomo Electric Industries Ltd.
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