Schottky-barrier gate field effect transistor and a process...

Details Schottky-barrier gate field effect transistor and a process... Schottky-barrier gate field effect transistor and a process...

H - Electricity

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356/149, 356/75

H01L 29/76 (2006.01) H01L 21/28 (2006.01) H01L 21/338 (2006.01) H01L 29/10 (2006.01) H01L 29/47 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1187206

TITLE OF THE INVENTION A Schottky-barrier gate field effect transistor and a process for the production of the same ABSTRACT OF THE DISCLOSURE This invention is concerned with an improved Schottky-barrier gate field effect transistor, which comprises a semi-insulating semiconductor substrate, an active layer formed on the surface of the semiconductor substrate and a source electrode, Schottky-barrier gate electrode and drain electrode formed on the active layer, in which the active layer has a first part having such a thickness as to give a predetermined pinch-off voltage and being formed near the gate electrode and a second part having a substantially similar carrier concentra- tion to that of the first part and a larger thickness than the first part and being formed between the Schottky- barrier gate electrode and source electrode, and the upper surfaces of the first part and second part of the active layer are in a same plane.

395215

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