Schottky barrier type semiconductor device

Details Schottky barrier type semiconductor device Schottky barrier type semiconductor device

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H01L 29/40 (2006.01) H01L 21/00 (2006.01) H01L 21/314 (2006.01) H01L 27/00 (2006.01) H01L 29/00 (2006.01) H01L 29/06 (2006.01) H01L 29/34 (2006.01) H01L 29/872 (2006.01)

Patent

CA 1051124

ABSTRACT OF THE DISCLOSURE A Schottky barrier is formed between a semiconductor substrate and a metal contact and stabilized by a polycrystalline silicon layer containing oxygen in the range between 2 and 45 atomic percent and surrounding a peripheral portion of the metal contact to improve the breakdown voltage characteristics of the device. The invention is applicable to Schottky barrier type diodes, bipolar transistors, field effect transistors and so on.

249688

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