Schottky diode - polycrystalline silicon resistor memory cell

Details Schottky diode - polycrystalline silicon resistor memory cell Schottky diode - polycrystalline silicon resistor memory cell

G - Physics

11

C

356/199, 352/81

G11C 11/34 (2006.01) G11C 17/16 (2006.01) H01L 27/102 (2006.01) H01L 27/12 (2006.01) H01L 27/24 (2006.01) H01L 29/861 (2006.01)

Patent

CA 1197929

F-1608 (8332-17) SCHOTTKY DIODE - POLYCRYSTALLINE SILICON RESISTOR MEMORY CELL ABSTRACT OF THE DISCLOSURE A programmable integrated circuit structure useful for fabricating integrated circuit memory cells and a method of fabricating the cells are disclosed. The programmable structure includes a serially connected Schottky diode and a resistor formed by a region of intrinsic polycrystalline silicon. The resistance of the resistor is irreversably changeable by application of a suitably high threshold voltage. Application of such a voltage changes the charac- teristics of the resistor permanently, thereby providing a means for the storage of information.

402946

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