Schottky-gate field effect transistor with trapezoidal gate

Details Schottky-gate field effect transistor with trapezoidal gate Schottky-gate field effect transistor with trapezoidal gate

H - Electricity

01

L

356/149

H01L 29/76 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1244966

Abstract of the Disclosure: A Schottky-gates field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.

505246

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