H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/58
H01L 29/86 (2006.01) H01L 29/06 (2006.01) H01L 29/872 (2006.01)
Patent
CA 1207465
Abstract of the Disclosure A Schottky power diode includes a semiconductor sub- strate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.
428565
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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