Schottky power diode

Details Schottky power diode Schottky power diode

H - Electricity

01

L

356/153

H01L 29/86 (2006.01) H01L 29/47 (2006.01) H01L 29/872 (2006.01)

Patent

CA 1215478

ABSTRACT OF THE DISCLOSURE A Schottky power diode includes a semiconductor substrate having a given band gap, a semi-insulating intermediate layer disposed on the substrate, an insulating layer disposed on the intermediate layer and a Schottky contact disposed on the inter- mediate layer, whereby the intermediate layer is disposed between the Schottky contact and the substrate, the intermediate layer having a density of localized states from 1017 to 1020 eV cm-3, the intermediate layer having a band gap larger than the given band gap in the semiconductor substrate, and the intermediate layer having a resistivity of between 105 and 1011 ohm cm. On the other hand the insulating layer may be disposed on the sub- strate and the intermediate layer may be at least partly disposed on the insulating layer.

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