H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/161
H01L 29/04 (2006.01)
Patent
CA 1104266
RD-7857 ABSTRACT OF THE DISCLOSURE A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the slides of said projection.
303947
Ferro Armand P.
Temple Victor A.k.
Company General Electric
Eckersley Raymond A.
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