Scr having high gate sensitivity and high dv/dt rating

Details Scr having high gate sensitivity and high dv/dt rating Scr having high gate sensitivity and high dv/dt rating

H - Electricity

01

L

356/161

H01L 29/04 (2006.01)

Patent

CA 1104266

RD-7857 ABSTRACT OF THE DISCLOSURE A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the slides of said projection.

303947

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