G - Physics – 02 – F
Patent
G - Physics
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G02F 1/37 (2006.01) H01S 3/109 (2006.01) H01S 5/183 (2006.01) G02F 1/377 (2006.01) H01S 5/06 (2006.01) H01S 5/32 (2006.01)
Patent
CA 2128251
Second-Harmonic Generation in Semiconductor Heterostructures Abstract of the Disclosure Quasi-phase matched (QPM) second-harmonic (SH) generation in the reflection geometry is described. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al0.8Ga0.2As/GaAs heterostructure designed for .lambda.=1.06 µm incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to make thin films with extremely high SH generation efficiencies. This is of particular interest used in vertical cavity surface emitting lasers (VCSELs).
Chatenoud Francoise
Dai Hongxing
Dion Michel
Fernando Chan
Janz Siegfried
Anderson J. Wayne
Chatenoud Francoise
Dai Hongxing
Dion Michel
Fernando Chan
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