G - Physics – 11 – B
Patent
G - Physics
11
B
G11B 5/39 (2006.01) G01R 33/09 (2006.01) H01F 10/32 (2006.01) H01L 43/08 (2006.01)
Patent
CA 2340094
A bottom spin valve sensor employs a seed layer (201) for a nickel oxide (NiO) antiferromagnetic pinning layer (212) for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve or an antiparallel (AP) spin valve sensor. The seed layer is tantalum oxide TayOx or copper (Cu).
L'invention porte sur un capteur inférieur d'onde de spin qui utilise une couche (201) germe dans une couche (212) de fixation antiferromagnétique d'oxyde de nickel (NiO) en vue d'accroître la résistance magnétique du capteur (dR/R). Le capteur d'onde de spin peut être un capteur simple ou un capteur antiparallèle (AP). La couche germe est de l'oxyde de tantale (Ta¿y?O¿x?) ou du cuivre (Cu).
Hitachi Global Storage Technologies Netherlands B.v.
International Business Machines Corporation
Saunders Raymond H.
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