B - Operations – Transporting – 23 – K
Patent
B - Operations, Transporting
23
K
B23K 10/00 (2006.01) H01L 21/3213 (2006.01)
Patent
CA 2063371
A method of selectively etching a refractory metal nitride film, with application to formation of TiN local interconnects for VLSI integrated circuits, and particularly a method of selectively etching TiN relative to a refractory metal silicide. The method comprises heating the substrate in a non-reactive gas; generating a plasma comprising chemically reactive halogen species having ion energies significantly below 100eV preferably by electron cyclotron resonance (ECR) excitation of a halocarbon containing gas; and exposing selected areas of the nitride film to the reactive halogen species. For etching TiN, preferred halocarbon containing gases are CF4 and C2F6. The substrate is preferably exposed to reactive ion species having energies less than 30eV, so that the energy of ions incident on the substrate is sufficient only to etch TiN, while the silicide is not significantly etched by the reactive species of the plasma. The etch selectivity is further enhanced during etching of the substrate at elevated temperatures in the range 100°C to 120°C.
de Wilton Angela C.
Jolly Gurvinder
Nortel Networks Limited
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