Selective omcvd growth of compound semiconductor materials...

Details Selective omcvd growth of compound semiconductor materials... Selective omcvd growth of compound semiconductor materials...

H - Electricity

01

L

148/2.4, 148/3.8

H01L 21/205 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1320104

Abstract of the Disclosure A method of OMCVD heteroepitaxy of III/V (GaAs) material on a patterned Si substrate is described wherein heteroepitaxy deposition occurs only on the exposed Si surfaces and nowhere else.

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