Self-aligned antiblooming structure for charge- coupled...

H - Electricity – 01 – L

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345/1, 356/197

H01L 27/14 (2006.01) H01L 27/148 (2006.01) H01L 31/08 (2006.01)

Patent

CA 1203326

F-1479 (50.3999) (8332-18) SELF-ALIGNED ANTIBLOOMING STRUCTURES FOR CHARGE-COUPLED DEVICES AND METHOD OF FABRICATION THEREOF ABSTRACT OF THE DISCLOSURE A self-aligned element antiblooming structure for application to charge-coupled devices includes a region in the substrate in which the charge-coupled device is fabri- cated into which both a P and an N conductivity type impurity are introduced. By introducing impurities of different diffusivities, a sink region is created between two very narrow antiblooming barriers. Using appropriate process controls, the potential height of the antiblooming barriers may be adjusted to drain excess charge accumulating in the substrate adjacent the antiblooming barriers. In this manner the antiblooming function is accomplished using only a mini- mal area of the substrate. The invention is applicable to charge-coupled devices utilizing a variety of different clocking schemes, and to charge-coupled device image sensors using buried channels.

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