Self-aligned buried contact and method of making

Details Self-aligned buried contact and method of making Self-aligned buried contact and method of making

H - Electricity

01

L

356/149

H01L 29/40 (2006.01) H01L 21/28 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 27/108 (2006.01) H01L 29/08 (2006.01) H01L 29/86 (2006.01)

Patent

CA 1160362

Abstract: The present invention relates to a method of making a self-aligned buried contact MOS semiconductor device and the device itself. The device is comprised of a semi- conductor substrate of a first conductivity and a contact area of a second conductivity on the surface of the substrate Doped regions are provided on each side of the contact area. A thick oxide is provided over the doped regions. Conductive metallization is provided over the contact area. In the method the steps comprise depositing a silicon nitride layer on a substrate of a first conductivity, patterning the silicon nitride layer to define a channel region and a contact region spaced from the channel region by a third region, doping the surface of the substrate in the third region with a dopant of a second conductivity and growing thick oxide over this third region. The method further includes the steps of removing the silicon nitride layer from the channel and contact region, forming a thin oxide layer on the channel region and doping the contact region with a dopant of a second conductivity and depositing a conductor over the contact region.

371429

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