Self-aligned buried strap for trench type dram cells

Details Self-aligned buried strap for trench type dram cells Self-aligned buried strap for trench type dram cells

H - Electricity

01

L

H01L 27/108 (2006.01)

Patent

CA 2130978

A deep trench type DRAM cell with shallow trench isolation has a buried polysilicon strap that is defined without the use of a separate mask by depositing the strap material over at least the deep trench before shallow trench definition and using the shallow trench isolation mask to overlap partially the deep trench, thereby defining the strap during the process of cutting the shallow trench.

Cellule DRAM de type à tranchée profonde avec isolement par tranchées peu profondes qui comprend une bande de court-circuit en silicium polycristallin enfouie produite, sans l'usage d'un masque distinct, par dépôt du matériau de bande de court-circuit sur au moins la tranchée profonde avant la production de la tranchée peu profonde et, par la superposition partielle du masque d'isolement de la tranchée peu profonde sur la tranchée profonde, de sorte que la bande de court-circuit est créée lors de la production de la tranchée peu profonde.

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