Self-aligned cmos process for bulk silicon and insulating...

Details Self-aligned cmos process for bulk silicon and insulating... Self-aligned cmos process for bulk silicon and insulating...

C - Chemistry, Metallurgy

30

B

356/128

C30B 35/00 (2006.01) H01L 21/72 (1980.01)

Patent

CA 1057414

ABSTRACT OF THE DISCLOSURE The method for fabrication of a self-aligned gate CMOS structure which employs no additional masking steps as compared to the standard CMOS fabrication process, this improved process providing the advantages of self-alignment between the N+ and P+ source and drain diffusions with respect to their gate regions, and metal contact openings which do not overlap the edges of the P+ or N+ source and drain regions. The self-aligning gate region is defined by a silicon nitride gate layer. Several embodiments of the novel process are described.

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