Self-aligned nanotube field effect transistor and method of...

Details Self-aligned nanotube field effect transistor and method of... Self-aligned nanotube field effect transistor and method of...

H - Electricity

01

L

H01L 51/00 (2006.01) H01L 51/30 (2006.01)

Patent

CA 2479024

A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon- nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from 10 the carbon-nanotube by a dielectric film [111].

L'invention concerne un dispositif à semi-conducteur comprenant un transistor à effet de champ muni d'un nanotube de carbone [104] déposé sur un substrat [102], d'une source et d'un drain [106-107] formés, respectivement, au niveau d'une première extrémité et d'une seconde extrémité du nanotube de carbone [104], ainsi que d'une grille [112] formée sensiblement sur une partie du nanotube de carbone [104], séparée du nanotube de carbone par un film diélectrique [111].

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