Self-aligned nanotube field effect transistor and method of...

Details Self-aligned nanotube field effect transistor and method of... Self-aligned nanotube field effect transistor and method of...

Category

H - Electricity

Subcategory

01

Subsubcategory

L

IPC codes

H01L 21/18 (2006.01) H01L 29/16 (2006.01) H01L 29/772 (2006.01)

Type

Patent

Patent number

CA 2659479

Description

A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].

Transistor autoaligné à effet de champ et à semi-conducteurs doté d'un nanotube de carbone ¬104| déposé sur un substrat ¬102|, d'une source et d'un drain ¬106-107| placés chacun au niveau de la première extrémité et de la seconde extrémité du nanotube de carbone ¬104| ainsi que d'une grille ¬112| placée presque complètement sur une partie du nanotube de carbone ¬104| et séparée du nanotube de carbone par une pellicule diélectrique ¬111|.

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