Self-aligned non-volatile memory cell

Details Self-aligned non-volatile memory cell Self-aligned non-volatile memory cell

H - Electricity

01

L

H01L 29/788 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 21/768 (2006.01) H01L 29/423 (2006.01)

Patent

CA 2427232

Disclosed is a self-aligned non-volatile memory cell (200) comprising a small sidewall spacer (239) electrically coupled and being located next to a main floating gate region (212). Both the small sidewall spacer (239) and the main floating gate region (212) are formed on a substrate (204) and both form the floating gate of the non-volatile memory cell. Both are isolated electrically from the substrate by an oxide layer (232) which is thinner (260) between the small sidewall spacer (239) and the substrate (204); and is thicker (263) between the main floating gate region (212) and the substrate (204). The small sidewall spacer (239) can be made small; therefore, the thin oxide layer area can also be made small to create a small pathway for electrons to tunnel into the floating gate.

Cette invention concerne une cellule de mémoire à auto-alignement (200) comprenant une petite paroi intercalaire (239) couplée électriquement et disposée contre une région de grille flottante principale (212). La cloison intercalaire (239) et la région de grille flottante principale (212) sont toutes deux formées sur un substrat (204) et constituent ensemble la grille flottante de la cellule de mémoire non volatile. Toutes deux sont isolées électriquement du substrat par une couche d'oxyde (232) qui est plus mince entre la petite paroi intercalaire (239) et le substrat (204) et plus épaisse entre ledit substrat et la région à grille flottante principale (212). Compte tenu de la petite taille de la paroi intercalaire (239), la région de la couche d'oxyde est également petite, ce qui permet ce créer un petit passage par lequel les électrons pénètrent par effet de tunnel dans la grille flottante.

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