Self-aligned trench field effect transistors with regrown...

Details Self-aligned trench field effect transistors with regrown... Self-aligned trench field effect transistors with regrown...

H - Electricity

01

L

H01L 21/04 (2006.01) H01L 29/737 (2006.01) H01L 29/808 (2006.01)

Patent

CA 2632233

Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self- aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.

La présente invention concerne des transistors à effet de champ à jonction avec des canaux verticaux et des gâchettes reformées auto-alignées et les procédés de fabrication de ces dispositifs. Les procédés utilisent des techniques pour faire croître sélectivement et/ou retirer sélectivement du matériau semi-conducteur pour constituer une gâchette à jonction p-n le long des côtés du canal et sur le bas des tranchées séparant les doigts de source. Elle concerne également des procédés de fabrication de transistors à jonction bipolaire avec des zones de contact de base reformées auto-alignées et des procédés de fabrication de ces dispositifs. Ces dispositifs semi-conducteurs peuvent être fabriqués en carbure de silicium.

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