G - Physics – 01 – B
Patent
G - Physics
01
B
G01B 7/16 (2006.01)
Patent
CA 2391164
A self-compensated sensor (10) is disclosed which is fabricated by sputtering Pt and ITO films that (12) were subsequently patterned. The sensor includes a wide band semiconductor and metal. For generating experimental fata four Pt bond pads are presented (16a, 16b, 16c and 16d).
L'invention concerne un capteur à autocompensation (10) fabriqué par pulvérisation cathodique de films de Pt et d'oxyde d'étain-indium qui (12) ont été subséquemment structurés. Le capteur comprend un semi-conducteur à bande large et un métal. Afin de produire des données expérimentales, quatre plots de connexion en Pt (16a, 16b, 16c, et 16d) sont mis en place.
Borden Ladner Gervais Llp
The Board Of Governors For Higher Education State Of Rhode Island And P. Rovidence Plantations
LandOfFree
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