Self-compensated ceramic strain gage for use at high...

G - Physics – 01 – B

Patent

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G01B 7/16 (2006.01)

Patent

CA 2391164

A self-compensated sensor (10) is disclosed which is fabricated by sputtering Pt and ITO films that (12) were subsequently patterned. The sensor includes a wide band semiconductor and metal. For generating experimental fata four Pt bond pads are presented (16a, 16b, 16c and 16d).

L'invention concerne un capteur à autocompensation (10) fabriqué par pulvérisation cathodique de films de Pt et d'oxyde d'étain-indium qui (12) ont été subséquemment structurés. Le capteur comprend un semi-conducteur à bande large et un métal. Afin de produire des données expérimentales, quatre plots de connexion en Pt (16a, 16b, 16c, et 16d) sont mis en place.

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