Self-refreshing memory cell

Details Self-refreshing memory cell Self-refreshing memory cell

G - Physics

11

C

352/82

G11C 11/34 (2006.01) G11C 14/00 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1189972

-25- SELF-REFRESHING MEMORY CELL Andrew C. Tickle ABSTRACT OF THE DISCLOSURE A self-refreshing non-volatile memory cell having two cross-coupled transistors includes a first floating gate formed between the gate and the channel of said first transistor, said first floating gate overlying by means of a tunnel oxide a portion of the drain of said second transistor and a second floating gate formed between the gate and channel of said second transistor, a portion of said second floating gate overlying by tunnel oxide a portion of the drain of the first transistor. Dis- turbances in the supply voltage and the gate voltage of the device normally enhance rather than degrade the state of data stored in the cell, thereby providing an extremely long storage time for the cell. The cell is capable of operating simultaneously in a volatile and a non-volatile state.

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