Semi conducteur laser with temperature independant performances

H - Electricity – 01 – S

Patent

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Details

H01S 5/183 (2006.01) H01S 3/08 (2006.01)

Patent

CA 2376946

Diode lasers are fabricated whose performance is essentially unchanged over designed temperature and bias ranges. The threshold current (Ith) and the external efficiency (~ext) of the diode lasers are unchanged over a range of specified temperatures.

Dans cette invention, on fabrique des diodes lasers dont les performances restent pratiquement inchangées dans les plages de températures et de polarisation déterminées. Le courant de seuil (I¿th?) et le rendement externe (~¿ext?) des diodes lasers restent inchangés dans une plage de températures spécifiées.

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