Semi-conductor device with schottky barrier silicide...

Details Semi-conductor device with schottky barrier silicide... Semi-conductor device with schottky barrier silicide...

H - Electricity

01

L

356/154

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1169586

SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR Abstract of the Disclosure In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

383760

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