G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/015 (2006.01) G02F 1/017 (2006.01) G02F 1/21 (2006.01) H01L 21/20 (2006.01) H01L 31/0352 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2068991
2068991 9107688 PCTABS00005 An opto-electronic component comprises a substrate of InP (4, 5) with stacks of quantum wells (6) grown on both surfaces of the substrate. Layers (7) of n doped InP having p-doped regions (8) are formed on the outer surface of the quantum well structures. In use, voltages V1 and V2 may be applied to electrodes (1) enabling the component to be used for a number of applications, e.g. as a detector/modulator pair, in close coupled arrays of modulators, etc.
Rejman-Greene Marek A. Z.
Scott Edward G.
British Telecommunications Public Limited Company
G. Ronald Bell & Associates
Rejman-Greene Marek A. Z.
Scott Edward G.
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