Semi conductor structures

Details Semi conductor structures Semi conductor structures

G - Physics

01

R

G01R 31/311 (2006.01) G01N 21/956 (2006.01)

Patent

CA 2366563

Semiconductor wafers, circuit boards and similar multi-layer structures are optically inspected at high speeds with the aid of preferably a pair of oppositely and inclinedly directed laser beams at inclined angles to the vertical and the wafer surface to cause fluorescence by a photoresist layer carrying conductor patterns, defects in which are to be inspected, and using preferably a time-delay-integration CCD imaging camera for recording a fluorescent resist surface image accentuating the non-fluorescing conductor pattern thereupon, while masking all light from layers therebelow.

L'invention porte sur des tranches de semi-conducteurs, des plaquettes de circuits, et des structures similaires multicouches objet d'examens optiques à grande vitesse de préférence à l'aide d'une paire de faisceaux placés en opposition et inclinés par rapport à la verticale et la surface de la tranche, de manière à provoquer la fluorescence d'une couche de photorésist porteuse d'un motif de connecteurs dont les défauts doivent être détectés. On utilise de préférence une caméra CCD pour enregistrer l'image de la surface fluorescente de résist en accentuant les parties non fluorescentes des conducteurs, tout en masquant entièrement la lumière provenant des couches sous-jacentes.

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