Semi-conductor transducer, and the use thereof in an...

G - Physics – 01 – N

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G01N 27/12 (2006.01) G01N 33/00 (2006.01)

Patent

CA 2702726

The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate (1) on the surface of which two electrodes (2, 2') and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2 < 1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1 = 1.

L'invention concerne un transducteur à semi conducteurs, et son utilisation dans un capteur d'espèces donneuses d'électrons ou acceptrices d'électrons. Le transducteur est constistué par un substrat isolant (1) à la surface duquel sont déposées deux électrodes (2, 2') et un élément sensible semi conducteur. L'élément sensible est constitué par une couche d'un matériau moléculaire semi conducteur M1 qui a une conductivité C1 et une couche d'un matériau moléculaire semi conducteur M2 qui a une conductivité C2 et une largeur de bande interdite E g2 < 1 eV. La couche de matériau M1 est en contact avec les électrodes. La couche de matériau M2 est déposée sur la couche de matériau M1 et n'est pas en contact avec les électrodes. Les conductivités sont telles que C2/C1 >= 1.

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