Semi-insulating gan and method of making the same

Details Semi-insulating gan and method of making the same Semi-insulating gan and method of making the same

H - Electricity

01

L

H01L 29/20 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01)

Patent

CA 2525618

Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the growing gallium nitride material during growth thereof with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.

L'invention a trait à un nitrure de gallium semi-isolant monocristal grande surface, qui est d'une grande utilité pour former des substrats permettant de produire des systèmes GaN pour des applications électroniques et/ou opto-électroniques. L'on forme facilement le nitrure de gallium semi-isolant grande surface selon l'invention en dopant, pendant sa croissance, le matériau de nitrure de gallium en croissance avec une espèce dopante réceptrice profonde, par ex. Mn, Fe, Co, Ni, Cu, etc., afin de compenser les espèces donneuses dans le nitrure de gallium, et conférer un caractère semi-isolant au nitrure de gallium.

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